1 Soft errors induced by radiation are an increasing problem in the microelectronic field. Although traditional models estimate the reliability of memories suffering Single Event U...
: Spin-Torque Transfer Magnetic RAM (STT MRAM) is a promising candidate for future universal memory. It combines the desirable attributes of current memory technologies such as SRA...
Jing Li, Charles Augustine, Sayeef S. Salahuddin, ...
Achieving high performance under a peak temperature limit is a first-order concern for VLSI designers. This paper presents a new model of a thermally-managed system, where a stoch...
Soft errors, once only of concern in memories, are beginning to affect logic as well. Determining the soft error rate (SER) of a combinational circuit involves three main masking ...
High efficiency low voltage DC-DC conversion is a key enabler to the design of power-efficient integrated circuits. Typically a star configuration of the DC-DC converters, where o...